| 发明名称 |
FUSE STRUCTURE AND SEMICONDUCTOR MEMORY DEVICE USING THE SAME |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a fuse structure capable of shortening the length of a fuse circuit and improving an operational speed, and a semiconductor memory device using it. <P>SOLUTION: A fuse structure comprises first and second fuses, and the first and second fuses have one end and the other end each. One end of the first fuse is connected to the other end in a straight line. The second fuse has one end arranged clear of one end of the first fuse by a first interval, and has the other end arranged clear of the other end of the first fuse by a second interval. One-side ends of the first and second fuses have the same or a narrower widths than those of the other ends of the first and second fuses. <P>COPYRIGHT: (C)2004,JPO |
| 申请公布号 |
JP2004119965(A) |
申请公布日期 |
2004.04.15 |
| 申请号 |
JP20030298069 |
申请日期 |
2003.08.22 |
| 申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
KYO SHOSEKI;CHOI JONG-HYUN;HWANG SANG-KI |
| 分类号 |
H01L21/82;G11C29/00;H01L21/8242;H01L23/525;H01L27/10;H01L27/108 |
主分类号 |
H01L21/82 |
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