| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a ferroelectric memory device provided partly with a group of memories that cannot be rewritten. <P>SOLUTION: The ferroelectric memory device is provided with a first kind ferroelectric memory MC1 group with a high imprint characteristic and a second kind ferroelectric memory MC2 group with a low imprint characteristic. The first kind ferroelectric memory MC1 is provided with such an adhesion layer 25 being in contact with the lower surface of a lower electrode 24 that is made of titanium oxide, and the second ferroelectric memory MC2 is provided with such an adhesion layer 26 being in contact with the lower surface of the lower electrode 24 that is made of tantalum oxide. <P>COPYRIGHT: (C)2004,JPO |
