| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problem that a multilayered wiring structure can not be provided in a semiconductor device, and an insulating resin sheet is much warped in a manufacturing process of the semiconductor device which is composed of a support board of a flexible sheet with a conductive pattern and a semiconductor element mounted on the board and all sealed up with resin. <P>SOLUTION: A first thin conductive film 11 and a second thick conductive film 12 are laminated through the intermediary of a third conductive film 13 into a laminated board 10. The laminated board 10 is used. In a process of forming a first conductive wiring layer 11A by etching the first thin conductive film 11, an etching depth can be controlled by stopping the etching with the third conductive film 13. Therefore, the first conductive film 11 is made thin, whereby the first conductive wiring layer 11A can be formed into a fine pattern. A second conductive wiring layer 14A is formed through the intermediary of a first insulating layer 15, so that a multilayer interconnection can be realized. <P>COPYRIGHT: (C)2004,JPO |
