| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for forming drawing data capable of shortening the time for formation when forming the drawing data constituting the patterns of an exposure mask used in a process for manufacturing semiconductor devices and the patterns for direct exposure in the process for manufacturing the semiconductor devices. <P>SOLUTION: A library for the design data is formed by forming the patterns constituting part of the design data and a library for the drawing data is formed by converting the patterns of the library for the design data to the drawing data. Next, the design data is formed by using the patterns of the library for the design data (F6) and the portions exclusive of the patterns of the library for the design data in the design data are converted to the drawing data (F11). Next, the patterns of the library for the drawing data corresponding to the patterns of the library for the design data and the patterns of the drawing data converted from the design data exclusive of the patterns of the library for the design data are superposed on each other (F12). <P>COPYRIGHT: (C)2004,JPO</p> |
