| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface treatment method for a semiconductor substrate, that enables building of a structure (formation) having higher quality, and a deep and/or high aspect ratio. SOLUTION: The method, which executes a cyclic process, consisting of multiple recursive process cycles having a first process that is a reactive ion etching and a second process that is an immobile chemical vapor disposition, thereby etching a structure, changes with time the gas flow rate included in the cyclic process, reaction chamber pressure, plasma power, substrate bias, etching rate, vapor disposition rate, process cycle time, and at least one of plural parameters, consisting of etching/vapor disposition ratios in each cycle in the process cycle, thus securing high-quality etching of the structure. COPYRIGHT: (C)2004,JPO
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