| 摘要 |
PROBLEM TO BE SOLVED: To obtain an HBT structure with smaller turn-on voltage without deteriorating a current gain characteristic of the HBT. SOLUTION: GaAs is used for a base layer 7 and InGaP with an In mixed crystal ratio of 0.49 or more and 0.56 or less for an emitter layer 6 to construct a heterojunction. COPYRIGHT: (C)2004,JPO
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