| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device with a high yield by always carrying out a heat treatment under stable temperature control even if the state of the detection surface of a radiation thermometer changes. SOLUTION: A substrate holding board 2 is heated with a heater 3 and subsequently a semiconductor 1 placed on a front surface of the substrate holding board 2 is heated. The temperature of the heater 3 is detected with a thermo-couple 11, while that of the semiconductor substrate 1 is detected in non-contact measurement of the substrate holding board 2 by means of the radiation thermometer 12. A difference in temperatureΔT between a temperature Tc in an initial state measured with the radiation thermometer 12 and a temperature Tc' after cleaning measured with the radiation thermometer 12 is calculated. By adding the difference in temperatureΔT to the reference value Tc for temperature compensation, stable control of temperature can be always performed with respect to the substrate holding board 2. COPYRIGHT: (C)2004,JPO
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