| 摘要 |
PROBLEM TO BE SOLVED: To provide a circuit simulation device and a model creation method capable of quickly and easily creating the models of MOS transistors whose diffused layer length is different. SOLUTION: A diffused layer dependency parameter correcting means 4 creates the diffused layer length dependent approximate formula of parameters from a transistor model 2 of an MOS transistor and the data of diffused layer length dependency parameters extracted from various diffused layer length transistors, and calculates the correction value of a parameter to be replaced with the value of the original parameter by using the created approximate formula. Thus, it is possible to easily replace the correction value with the value of the original parameter, and to create the transistor models of MOS transistors whose diffused layer length DL is different. Thus, it is possible to realize circuit simulation under the consideration of the diffused layer length dependency of the drain currents of the MOS transistors, and to realize highly precise simulation. COPYRIGHT: (C)2004,JPO
|
