| 摘要 |
PROBLEM TO BE SOLVED: To provide a method by which an epitaxial silicon wafer on which an oxide film is surely formed can be manufactured. SOLUTION: In this method, the epitaxial silicon wafer EPW is manufactured by forming an epitaxial silicon layer on the main surface of a silicon substrate S through vapor phase growth. After the vapor phase growth, ozone treatment is performed for forming an oxide film on the surface of the epitaxial silicon layer. Whether the oxide film is formed or not is determined based on, for example, the measured results of surface charges. When it is determined that the oxide film is not formed, oxide film forming treatment is performed. COPYRIGHT: (C)2004,JPO
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