| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which satisfactorily conduct the front and rear surface of a semiconductor substrate through pierced holes by boring the through hole at the semiconductor substrate. SOLUTION: A first pierced hole extending through the semiconductor substrate is bored by laser work to charge insulation material to the inside of the first pierced hole, and a second pierced hole extending through insulation substance is bored to charge conductive material to the inside of the second pierced hole or to form a conductive film on the inner surface of the second pierced hole. Thus, even when there is a residual matter of laser work, crack or a crystal defect on the inner surface of the pierced hole, a satisfactory insulation film can be formed and a satisfactory semiconductor device can be formed. By performing anisotropic after boring the through hole at the semiconductor substrate by laser work etching, even when the pierced hole has a shape having an under cut, the satisfactory insulation film can be formed and the satisfactory semiconductor device can be formed. COPYRIGHT: (C)2004,JPO
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