SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device of structure wherein a problem of short-circuit between an anode and cathode of diode structure never occurs even when being used at a humid place continuously. SOLUTION: For example, an n--type semiconductor layer 2 is formed on an n++type semiconductor substrate 1, and a p+type diffusion area 3 is formed on the front surface of it to form a pn junction. On the rear surface of the semiconductor substrate 1, On the rear surface of the semiconductor substrate 1, a first electrode 5 containing Ag is formed in ohmic contact with the semiconductor substrate 1, and a second electrode 6 consisting of Ag e.g. is formed in ohmic contact with the p+type diffusion area 3. Then, a first conductive isolation diffusion area 4 which reaches the semiconductor substrate 1 from the front surface of the n--type semiconductor layer 2 is formed, and an Al metal film 7 e.g. is formed in ohmic contact with the surface of the isolation diffusion area 4 to be electrically connected with the first electrode 5. COPYRIGHT: (C)2004,JPO