| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem that, since GaN used as a device material for ultraviolet-light detection has photosensitivity to visible light and an ultraviolet range, a device needs to remove unnecessary light by using an optical filter and make only ultraviolet light having a specified wavelength incident on a GAN detector. SOLUTION: A pn junction device comprises a Zn<SB>x</SB>Mg<SB>1-x</SB>O (0.7<x≤1) single crystal thin film which is formed by epitaxial growth on an ITO single crystal film, an NiO thin film which is deposited on the Zn<SB>x</SB>Mg<SB>1-x</SB>O single crystal thin film as a polycrystalline or amorphous film and annealed for epitaxial growth and contains Li ions exhibiting p-type electric conduction, or an amorphous InGaO<SB>3</SB>(ZnO)<SB>m</SB>(m: an integer between 1 and 50) which is formed of a ZnRh<SB>2</SB>O<SB>4</SB>film and deposited on the pn junction device and ITO film and shows n-type electric conduction, and an amorphous NiO thin film or ZnRh<SB>2</SB>O<SB>4</SB>thin film which is deposited on InGaO<SB>3</SB>(ZnO)<SB>m</SB>and shows p-type electric conduction. COPYRIGHT: (C)2004,JPO
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