| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a an inverter device equipped with a highly reliable boosting level shift circuit without using a photocoupler. <P>SOLUTION: The inverter device comprises a first semiconductor chip including an upper arm drive unit and a current detection circuit; a second semiconductor chip including a lower arm drive unit and a drive signal processing circuit; and a third semiconductor chip including a high-withstand voltage MOSFET for the level shift circuit. The first and second semiconductor chips are formed on an SOI board, the chips are arranged on an insulating board and resin-molded, and a semiconductor switching element is arranged as an individual component. <P>COPYRIGHT: (C)2004,JPO |
