CRYSTAL GROWTH METHOD AND MULTILAYER STRUCTURE FORMED BY THE METHOD

摘要

PROBLEM TO BE SOLVED: To provide a crystal growth method which restrains generation of cracks and a multilayer structure which is formed by the method.

SOLUTION: In the crystal growth method, a multilayer structure is formed by depositing an about 300 nm-thick AlN crystalline layer 2, an about 300 nm-thick undoped GaN crystalline layer 3, an about 30 nm-thick undoped AlN lattice buffer layer 4 and an about 75 nm-thick undoped AlGaN crystalline layer 5 of Al composition of about 30% one by one on a sapphire substrate 1 of c-surface positive orientation (less than ±2°).

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