| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser element that reduces a drive current in high output, does not generate COD, and has excellent long-term reliability, and to provide a method for manufacturing the semiconductor laser element. SOLUTION: A laser semiconductor device is the semiconductor laser element. The semiconductor laser element includes a semiconductor substrate, a first conductivity type first cladding layer, an active layer, a second conductivity type cladding layer, and a second conductive type protection layer. In the semiconductor laser element, the peak wavelength of photoluminescence in the active layer (a window region 104B) of a region near the end face of a laser resonator is smaller than that of photoluminescence in the active layer (an active region 104A) of a region inside the laser resonator. In the active layer of the region near the end face of the laser resonator, a first impurity atom having second conductivity and a second one having the second conductivity are mixed and the concentration of the first impurity atom is higher than that of the second one. COPYRIGHT: (C)2004,JPO
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