发明名称 SUBSTRATE PROCESSING APPARATUS AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a substrate processing apparatus for protecting a measuring mechanism, used for measurement of a substrate condition but having not always need of measuring the substrate condition, from a by-product and the like effectively, and for measuring the substrate condition with small error. SOLUTION: A susceptor 14 and a heater 16 are provided in a reaction chamber 10, and a semiconductor wafer 15 is mounted on the susceptor 14. An emissivity measuring irradiation thermometer 21 and a temperature measuring irradiation thermometer 24 are mounted through gate valves 22 and 25 in positions corresponding to holes 17 and 18 of a ceiling wall 11. By opening always the gate valve 25, the temperature of the semiconductor wafer 15 is measured. The emissivity of the semiconductor wafer 15 is measured by opening the gate valve 22. When the measurement of emissivity of the semiconductor wafer 15 is not performed, the gate valve 22 is closed. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004119823(A) 申请公布日期 2004.04.15
申请号 JP20020283334 申请日期 2002.09.27
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 TANABE MITSUAKI
分类号 G01J5/00;G01J5/02;G01J5/10;H01L21/3065;H01L21/31;(IPC1-7):H01L21/31;H01L21/306 主分类号 G01J5/00
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