| 摘要 |
PROBLEM TO BE SOLVED: To provide a novel semiconductor device which includes a resistance conductive layer, and also to provide a method of manufacturing the same. SOLUTION: The method of manufacturing the semiconductor device is for manufacturing a semiconductor device wherein the resistance conductive layer 24 and a MOS transistor 200 exist in a mixed state on one and the same semiconductor layer. The method of manufacturing the semiconductor device comprises forming the resistance conductive layer 24 on a first insulation layer 22 in a resistance conductive layer formation region and then forming a protective layer 26 so as to cover the resistance conductive layer 24; and forming a gate insulation layer 14 and a gate electrode 20 in a MOS transistor formation region. COPYRIGHT: (C)2004,JPO
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