SEMICONDUCTOR LASER DEVICE, SEMICONDUCTOR LASER ELEMENT AND MANUFACTURING METHOD OF THEM

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor laser element of an AlGaAs system whose productivity and yield are high and which can perform self-oscillation that is stable to high output, and to provide a manufacturing method of the element and a semiconductor laser device using it. SOLUTION: The semiconductor laser element of the AlGaAs system is provided with a first No. 2 conductive clad layer and a band-like second No. 2 conductive clad layer on an active layer formed of an AlGaAs system material. The band-like second No. 2 conductive clad layer is set to be In0.5(Ga1-yAly)0.5P(0.6≤y≤1), and a first No. 1 conductive clad layer to be In0.5(Ga1-xAlx)0.5P(0≤x≤0.2) with thickness of not less than 0.2μm. Thickness of the active layer is set to be not less than 40nm. COPYRIGHT: (C)2004,JPO