METHOD OF MANUFACTURING SILICON NITRIDE FILM OR SILICON OXYNITRIDE FILM BY THERMAL CHEMICAL VAPOR DEPOSITION METHOD

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a silicon nitride film or a silicon oxynitride film having excellent characteristics by the thermal chemical vapor deposition method without accompaniment of generation of ammonium chloride and mixture of carbon system contamination quality into the film. SOLUTION: A silicon nitride film is formed on a substrate (112) by supplying trisilyl amine and ammonium into a CVD reaction chamber (11) to store the substrate (112). In this case, a flow ratio for the trisilyl amine gas of ammonium gas is set to 10 or more and/or the thermal CVD reaction is performed at the temperature of 600°C or lower. A silicon oxynitride can be obtained by further introducing the oxygen source gas to the CVD reaction chamber (11). COPYRIGHT: (C)2004,JPO