| 摘要 |
PROBLEM TO BE SOLVED: To provide a bipolar transistor capable of protecting a large backward current corresponding to a forward large current by securing the area of an emitter region for making a large current so as to increase the area of a protective diode without incerasing a chip area. SOLUTION: A base region 3 consisting of a p-type region is formed in an n-type semiconductor layer 2 which is epitaxially grown on an n+-type semiconductor substrate 1 e.g. made into a collector region, and an emitter region 4 consisting of an n-type region is formed in the base region 3. A base electrode 5 and an emitter electrode 6 are provided in contact with the respective base region 3 and emitter region 4. In this emitter region 4, the base region 3 is exposed in this emitter region 4, and the emitter electrode 6 is provided so as to contact with a base region 4b exposed in the emitter region 4. COPYRIGHT: (C)2004,JPO
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