| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus and a method for extracting model parameters used for circuit simulation, which enables high precision analysis of operations in both regions of low gate voltage and high gate voltage. SOLUTION: The method of extracting model parameters is capable of extracting model parameters used for circuit simulation. This extracting method comprises an equivalent circuit forming process to virtually replace the transistor as the extraction object to an equivalent circuit where a plurality of transistors having different characteristics are connected in parallel, and an extracting process to extract model parameters by introducing a sum of the model functions of each transistor among a plurality of transistors to the actually measured characteristic of the transistor as the extraction object. COPYRIGHT: (C)2004,JPO
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