发明名称 |
Semiconductor device, semiconductor device module, manufacturing method of semiconductor device, and manufacturing method of semiconductor device module |
摘要 |
To provide a semiconductor device capable of corresponding to an applied bending stress by flexibly changing its shape, and to provide a semiconductor device module, a manufacturing method of the semiconductor device, and a manufacturing method of the semiconductor device module. In a silicon substrate whose front surface is provided with an element forming layer having an element forming region where a semiconductor element is formed, a groove is formed in a portion of the rear surface of the silicon substrate corresponding to a region of the element forming layer where a semiconductor element is not formed.
|
申请公布号 |
US2004070053(A1) |
申请公布日期 |
2004.04.15 |
申请号 |
US20030681274 |
申请日期 |
2003.10.09 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
OHARA YOSHIKAZU |
分类号 |
H01L23/12;H01L21/02;H01L21/30;H01L21/306;H01L21/60;H01L29/06;(IPC1-7):H01L21/30 |
主分类号 |
H01L23/12 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|