发明名称 Semiconductor device, semiconductor device module, manufacturing method of semiconductor device, and manufacturing method of semiconductor device module
摘要 To provide a semiconductor device capable of corresponding to an applied bending stress by flexibly changing its shape, and to provide a semiconductor device module, a manufacturing method of the semiconductor device, and a manufacturing method of the semiconductor device module. In a silicon substrate whose front surface is provided with an element forming layer having an element forming region where a semiconductor element is formed, a groove is formed in a portion of the rear surface of the silicon substrate corresponding to a region of the element forming layer where a semiconductor element is not formed.
申请公布号 US2004070053(A1) 申请公布日期 2004.04.15
申请号 US20030681274 申请日期 2003.10.09
申请人 SHARP KABUSHIKI KAISHA 发明人 OHARA YOSHIKAZU
分类号 H01L23/12;H01L21/02;H01L21/30;H01L21/306;H01L21/60;H01L29/06;(IPC1-7):H01L21/30 主分类号 H01L23/12
代理机构 代理人
主权项
地址