Power semiconductor component, e.g. diode or metal oxide semiconductor field effect transistor, includes insulating layer with holes over terminals, onto which electrodes are deposited, making contact with terminals

摘要

An insulating layer is applied over the terminals (20, 30). The layer includes connection openings (51, 52) above them. Connection electrodes (61, 62) are applied onto the insulating layer (50), making contact with the terminals (20, 30) An Independent claim is included for the corresponding method of manufacture.