| 摘要 |
<P>PROBLEM TO BE SOLVED: To increase the concentration of holes in a p-type region. <P>SOLUTION: A shutter is kept in closed state or a baffle is disposed in front of a radical cell so that a nitrogen molecular beam emitted from a nitrogen radical cell impinges once against the shutter/baffle. Nitrogen molecular ions N<SB>2</SB><SP>+</SP>, nitrogen molecular radicals N<SB>2</SB><SP>*</SP>and nitrogen atom ions N<SP>+</SP>are active and when they enter a ZnSe based thin film, they do not become acceptors but become donors to cause self compensation. When a nitrogen molecular beam impinges against a metallic shutter/baffle, the N<SB>2</SB><SP>+</SP>and N<SB>2</SB><SP>*</SP>become N<SB>2</SB>and removed. The N<SP>+</SP>becomes N which forms an acceptor effectively. Consequently, the concentration of acceptors can be increased and thereby the density of holes can be increased. A low resistance p-type region and a low contact resistance p-type region can thereby be formed. <P>COPYRIGHT: (C)2004,JPO |
