NROM memory cell

摘要

An NROM memory cell is of a planar configuration without an additional oxidation being affected for the fabrication of the bit line oxide. The ONO layer is provided as a memory layer and is disposed with a uniform thickness on the semiconductor material of the source and drain regions and of the channel region, so that the ONO layer forms not only the gate dielectric, but also the insulation of the bit lines from the word lines or the gate electrode.