发明名称 |
Method for producing a semiconductor device and corresponding semiconductor device |
摘要 |
The present invention provides a method for producing a semiconductor device, with the steps of: applying an interconnect level (11, 12) to a semiconductor substrate (10); structuring the interconnect level (12); and applying a solder layer (13) on the structured interconnect level (11, 12) in such a way that the solder layer (13) assumes the structure of the interconnect level (11, 12). The present invention likewise provides such a semiconductor device.
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申请公布号 |
US2004070085(A1) |
申请公布日期 |
2004.04.15 |
申请号 |
US20030634242 |
申请日期 |
2003.08.05 |
申请人 |
HEDLER HARRY;MEYER THORSTEN;VASQUEZ BARBARA |
发明人 |
HEDLER HARRY;MEYER THORSTEN;VASQUEZ BARBARA |
分类号 |
H01L21/60;H01L23/485;H01L23/498;(IPC1-7):H01L23/48 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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