发明名称 Method for producing a semiconductor device and corresponding semiconductor device
摘要 The present invention provides a method for producing a semiconductor device, with the steps of: applying an interconnect level (11, 12) to a semiconductor substrate (10); structuring the interconnect level (12); and applying a solder layer (13) on the structured interconnect level (11, 12) in such a way that the solder layer (13) assumes the structure of the interconnect level (11, 12). The present invention likewise provides such a semiconductor device.
申请公布号 US2004070085(A1) 申请公布日期 2004.04.15
申请号 US20030634242 申请日期 2003.08.05
申请人 HEDLER HARRY;MEYER THORSTEN;VASQUEZ BARBARA 发明人 HEDLER HARRY;MEYER THORSTEN;VASQUEZ BARBARA
分类号 H01L21/60;H01L23/485;H01L23/498;(IPC1-7):H01L23/48 主分类号 H01L21/60
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