发明名称 |
GaN single crystal substrate and method of making the same |
摘要 |
The method of making a GaN single crystal substrate comprises a mask layer forming step of forming on a GaAs substrate 2 a mask layer 8 having a plurality of opening windows 10 disposed separate from each other; and an epitaxial layer growing step of growing on the mask layer 8 an epitaxial layer 12 made of GaN.
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申请公布号 |
US2004072410(A1) |
申请公布日期 |
2004.04.15 |
申请号 |
US20030691569 |
申请日期 |
2003.10.24 |
申请人 |
MOTOKI KENSAKU;OKAHISA TAKUJI;MATSUMOTO NAOKI |
发明人 |
MOTOKI KENSAKU;OKAHISA TAKUJI;MATSUMOTO NAOKI |
分类号 |
C30B25/02;H01L21/20;H01L33/00;H01S5/02;H01S5/323;(IPC1-7):C30B1/00 |
主分类号 |
C30B25/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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