SEMICONDUCTOR DIE PACKAGE INCLUDING DRAIN CLIP

摘要

A semiconductor die package (100) including a semiconductor die (108) comprising a first surface, a second surface, and a vertical power MOSFET having a gate region and a source region at the first surface a drain region at the second surface. A drain clip (101) having a major surface (101(a)) is electrically coupled to the drain region. A gate lead (112) is electrically coupled to the gate region. A source lead (111) is ectrically coupled to the source region. A non-conductive molding material (102) encapsulates the semiconductor die (108). The major surface (101(a)) of the drain clip (101) is exposed through the non-conductive molding material (102).