| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of arranging memory cells which can stabilize operations, during reading and during writing. <P>SOLUTION: After a first memory cell array 13 is formed by a first cell unit 12, a second memory cell array 15 is formed by a second cell unit 14 separated from a non-adjoining region 17, to be provided along the bit-line direction for arrangement of a back-gate in a memory cell array 11 of a semiconductor memory device. As a result of this, the front and rear memory cells separated from the non-adjoining region 17 are not reversed with each other. The number of bit line contacts to be provided to mutual bit lines to be made as the pair respectively (a bit line BLA and an X bit line XBLA, a bit line BLB and an X bit line XBLB) mutually become nearly equal. <P>COPYRIGHT: (C)2004,JPO |
