| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a polishing pad in which smoothing of the unevenness of a matter to be polished such as a silicon oxide film is stably and efficiently performed at high speed without requiring dressing, and at the same time, occurrence of a polishing scratch on a substrate is reduced, in a CMP technique such as smoothing an interlayer insulating film, a BPSG film and a shallow trench separating insulating film in a semiconductor element manufacturing process. <P>SOLUTION: This is a CMP pad for chemically and mechanically polishing the matter to be polished formed on a substrate, and constituted of at least two layers of a supporting layer and a surface layer on the supporting layer. The surface layer comprises a photocuring resin cured material formed by dividing into a plurality of desired microsegments on the supporting layer, by a lithography method using photocuring resin composition. This CMP pad is a conditioning free CMP pad requiring no dressing treatment. In this pad, variation in polishing speed is small, high polishing speed is obtained, few polishing scratch occurs, the number of substrate polishing processes is reduced, efficiency of substrate surface smoothing is improved, process management is simplified, and polishing scratch is reduced. <P>COPYRIGHT: (C)2004,JPO |
