| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light-emitting device that can have uniform light emission intensity over the entire device. <P>SOLUTION: The light-emitting device 10 includes a transparent substrate 12, a semiconductor layer 14, a p-side electrode 16, and an n-side electrode 18. The semiconductor layer 14 is formed on the transparent substrate 12 and includes an n-type GaN contact layer 22 laminated on the transparent substrate 12, and an InGaN light-emitting layer 24 and a p-type GaN contact layer 26. The p-side electrode 16 is formed on the p-type GaN contact layer 26 and includes a contact electrode part 16a made of palladium (Pd), that is formed on a part of the p-type GaN contact layer 26, and a reflecting electrode part 16b made of aluminum (Al), that is formed on the contact electrode part 16a and the p-type GaN contact layer 26. <P>COPYRIGHT: (C)2004,JPO |
