发明名称 NONVOLATILE SEMICONDUCTOR MEMORY
摘要 <p><P>PROBLEM TO BE SOLVED: To perform highly accurately threshold value control at the time of programing. <P>SOLUTION: A data circuit REGR used at the time of program /read is connected to bit lines BLek, BLok. The data circuit REGR has data storage parts DS1, DS2, and DS3. The data storage part DS1 is connected to the bit lines BLek, BLok. A data transfer circuit Qn10 is connected between the data storage part DS1 and the data storage part DS3. A data transfer circuit Qn9 is connected between the data storage part DS2 and the data storage part DS3. The data storage part DS2 has a function by which data of the data storage part DS1 is changed forcedly based on data stored in itself. <P>COPYRIGHT: (C)2004,JPO</p>
申请公布号 JP2004118940(A) 申请公布日期 2004.04.15
申请号 JP20020281205 申请日期 2002.09.26
申请人 TOSHIBA CORP 发明人 TANAKA TOMOHARU
分类号 G11C16/02;G11C11/56;G11C16/04;(IPC1-7):G11C16/02 主分类号 G11C16/02
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