TRAY FOR GASEOUS PHASE PROCESS

摘要

PROBLEM TO BE SOLVED: To provide a tray that achieves the continuous use between processes in which there are not cracks or the like by supporting or retaining a semiconductor substrate.

SOLUTION: In the tray for gaseous phase processes, a heat-resistant thermosetting resin is infiltrated in close contact into a surface including a pore wall surface inside an inorganic continuous pore sintered body whose thickness and open porosity are 0.5-10 mm and 5-50 %, respectively and a thin film made of an extreme thermostable thermosetting resin is formed on it. By adopting a manufacturing method of the tray for gaseous phase processes, both sputtering and diffusion processes can be performed with a semiconductor wafer being placed. Additionally, the tray in which the rubbing scratch of the semiconductor wafer caused by the rubbing between the semiconductor wafer and the tray is not generated is obtained.

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