发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To decide whether a contact hole is normally formed or not without bringing about a fault in a semiconductor device. SOLUTION: A method for manufacturing the semiconductor device includes the steps of first partitioning an inspecting hole forming region 10 in a non-functional region 11b different from an element forming region 11a of a semiconductor wafer 11, and forming a first insulating film 12 having a thickness and a composition equivalent to those of an interlayer insulating film of the region 11a on the region 10. Then, the method further includes a step of forming a hole 13 having an opening size equivalent to that of a contact hole in the film 12 by using a resist pattern14. The method further includes a step of then inspecting whether a non-through hole 13A which is not penetrating through the film 12, is generated or not by a scanning electron microscope. When a non-through hole 13A is generated, it is judged that the contact hole is not normally formed, while when the hole 13A is not generated, it is judged that the contact hole is normally formed. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004119449(A) 申请公布日期 2004.04.15
申请号 JP20020277253 申请日期 2002.09.24
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 JIWARI NOBUHIRO;MATSUTANI TETSUYA
分类号 H01L21/66;H01L21/768;H01L23/522;(IPC1-7):H01L21/768 主分类号 H01L21/66
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