WIRE, MANUFACTURING METHOD OF WIRE, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a wire and a manufacturing method thereof whereby the production of particles is suppressed when wires are formed so as to enhance an yield and suppress an increase in contact resistance, and to provide a semiconductor device and a manufacturing method thereof. SOLUTION: The manufacturing method of the semiconductor device includes steps of: forming an insulation film 2 on a silicon substrate 1; forming a contact hole 2a in the insulation film 2 located on the silicon substrate 1; forming a Ti layer 3 in the contact hole and on the insulation film; introducing oxygen 6 to the Ti layer 3; forming a TiN layer 4 on the surface of the Ti layer; applying heat treatment to the TiN and Ti layers to form a TiO2layer 3b under the TiN layer; removing the TiN layer 4; and forming an Al alloy layer 5 on the TiO2layer 3b and in the contact hole. COPYRIGHT: (C)2004,JPO