| 摘要 |
A temperature measuring sensor is incorporated in a substrate of a semiconductor device to measure a temperature of the substrate. The sensor has a diode formed in the substrate, and a resistor formed in the substrate and connected to the diode in series. When a first forward constant current is supplied to the diode through the resistor, a potential difference VA1 is produced between terminal ends of both the diode and the resistor connected in series, and a potential difference VF1 is produced between terminal ends of the diode. When a second forward constant current is supplied to the diode through the resistor, a potential difference VA2 is produced between the terminal ends of both the diode and the resistor connected in series, and a potential difference VF2 is produced between the terminal ends of the diode. A real temperature T of the substrate is calculated by the following formula: T=(q/k)(VF1-VF2)[1/[ln((VA1-VF1)/(VA2-VF2))]] herein: T is an absolute temperature, k is Boltzmann's constant, and q is an electron charge.
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