发明名称 Schaltungsanordnung und Verfahren zu deren Herstellung
摘要 The inventive circuit has at least one main substrate (HA) which is located between a first protective substrate (S1) and a second protective substrate (S2). The main substrate (HA) has at least one semiconductor component (H). A metal layer (M1, M2) is provided on surfaces of the two protective substrates (S1, S2), respectively. Said metal layers prevent the electromagnetic fields of the circuit from being emitted outwards.
申请公布号 DE19940759(B4) 申请公布日期 2004.04.15
申请号 DE1999140759 申请日期 1999.08.27
申请人 INFINEON TECHNOLOGIES AG 发明人 HUEBNER, HOLGER
分类号 H01L23/538;H01L23/552;H01L23/58;(IPC1-7):H01L23/58;H01L23/28 主分类号 H01L23/538
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