CONTACT STRUCTURE OF LOWER ELECTRODE AND FORMING METHOD THEREOF

摘要

PURPOSE: A contact structure of a lower electrode and a method for forming the same are provided to be capable of enhancing the contact area of the lower electrode and a lower layer. CONSTITUTION: A contact plug(180a) is electrically connected to an active region of a semiconductor substrate(100) through an insulating layer(120a). A protrudent supporting layer(260b) is formed on the contact plug, wherein the protrudent height of the supporting layer(260b) is higher than that of the insulating layer. A lower electrode(280a) of a capacitor is formed on the resultant structure.