| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to reduce contact resistance by forming a heavily doped doping layer on an exposed silicon substrate. CONSTITUTION: An isolation layer(12) is formed on a silicon substrate to define an active region. A buffer layer(14) is formed on the substrate. An interlayer dielectric(16) is formed on the buffer layer. A contact hole is formed to expose the substrate by selectively etching the interlayer dielectric and the buffer layer. The bottom of the contact hole is cleaned. A heavily doped doping layer(18) is formed by implanting dopants into the bottom of the contact hole. Then, a contact substance is filled in the contact hole.
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