| 摘要 |
PURPOSE: An ultrasonic cleaning method, a method for manufacturing a semiconductor device, and a method for manufacturing an active matrix type display device are provided to perform safely the ultrasonic cleaning process without generating damage of a target-object. CONSTITUTION: An ultrasonic cleaning method includes the first ultrasonic cleaning process and the second ultrasonic process. The first ultrasonic cleaning process is performed to clean a target by applying the first ultrasonic wave to an object, that is, the target to be cleaned. The second ultrasonic cleaning process is performed to clean the target by applying the second ultrasonic wave to the object. The first and the second ultrasonic cleaning processes are performed continuously and repeatedly. At this time, one of phase, wavelength and amplitude of the first and the second ultrasonic waves is different from each other.
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