发明名称 |
METHOD OF FABRICATING NON-VOLATILE MEMORY DEVICE FOR IMPROVING LEAKAGE CURRENT CHARACTERISTIC BETWEEN ERASE GATE AND FLOATING GATE |
摘要 |
PURPOSE: A fabrication method of a non-volatile memory device is provided to improve a leakage current characteristic between an erase gate and a floating gate by forming a thin gate insulating layer of a transistor necessary for satisfying a low-voltage operating speed. CONSTITUTION: A floating gate(63a) and a control gate(65a) are formed on a cell region of a semiconductor substrate(51). An oxide layer is formed on a peripheral region of the semiconductor substrate. The oxide layer is removed therefrom and a gate insulating layer(62) is formed thereon. A conductive material layer is formed on the entire surface of the semiconductor substrate. A masking process is performed by using a photoresist. An erase gate(71a) is formed to overlap with the control gate adjacent to the cell region of the semiconductor substrate. A low-voltage transistor is formed on a peripheral region of the semiconductor substrate.
|
申请公布号 |
KR100429178(B1) |
申请公布日期 |
2004.04.14 |
申请号 |
KR19970079137 |
申请日期 |
1997.12.30 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KIM, JI HYEOK |
分类号 |
H01L27/10;(IPC1-7):H01L27/10 |
主分类号 |
H01L27/10 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|