| 发明名称 |
A semiconductor device and method of manufacturing the same |
| 摘要 |
AS conductive patterns 11A to 11D are formed burying in a insulating resin 10 and a conductive foil 20 is formed being half-etched, thickness of the device is made thin. As an electrode for radiation 11D is provided, a semiconductor device superior in radiation is provided. <IMAGE> <IMAGE> |
| 申请公布号 |
EP1187203(A3) |
申请公布日期 |
2004.04.14 |
| 申请号 |
EP20010302549 |
申请日期 |
2001.03.20 |
| 申请人 |
SANYO ELECTRIC CO., LTD. |
发明人 |
SAKAMOTO, NORIAKI;KOBAYASHI, YOSHIYUKI;SAKAMOTO, JUNJI;OKADA, YUKIO;IGARASHI, YUSUKE;MAEHARA, EIJU;TAKAHASHI, KOUJI |
| 分类号 |
H01L23/36;H01L21/48;H01L23/31;H01L23/495 |
主分类号 |
H01L23/36 |
| 代理机构 |
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