| 摘要 |
PURPOSE: A method for forming a polysilicon pattern of a semiconductor device is provided to be capable of improving topology between a cell and peripheral region due to loading effect. CONSTITUTION: A polysilicon layer having the first, second and third region is deposited on a silicon substrate(1). The first photoresist pattern is formed on the polysilicon layer to selectively expose the third region. Dopants of the first conductive type are implanted into the exposed third region of the polysilicon layer. The second photoresist pattern is formed to expose the first region. Then, dopants of the second conductive type are implanted into the exposed first region. The polysilicon layer is etched by using different etching selectivity between the first, second and third region, thereby forming a polysilicon pattern(10).
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