| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of easily recovering losses of a substrate when forming a spacer by using a screen oxide layer. CONSTITUTION: A gate oxide layer(203) and a conductive layer are sequentially formed on a silicon substrate(201). A gate electrode(205) is formed by selectively etching the conductive layer. A spacer(209) is formed at both sidewalls of the gate electrode, wherein the gate oxide layer(203) on the substrate is partially removed. The remaining gate oxide layer is entirely removed. A screen oxide layer(211) is grown on the substrate by oxidizing.
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