发明名称 |
Band gap reference circuit |
摘要 |
A band gap reference includes circuitry providing a reference voltage (VDIODE) at 1.0 volt or below to provide a stable reference for 1.3 volt or lower circuits, which would otherwise not function accurately with a typical band gap reference of 1.2 volts. The band gap reference includes an op-amp equally driving the gate of various current source transistors. A first current source drives a BJT transistor connected in a diode fashion, while a second current source drives a further diode connected BJT transistor through a resistor. An output VDIODE is provided from a further resistor connected to two additional current sources. The first of these current sources is driven by the op-amp output to increase output with temperature, while the second of these current sources is driven by a replicating op-amp connected to a resistor providing current decreasing with temperature, both current sources functioning to provide a stable low voltage VDIODE on the resistor with variations in temperature and supply voltage.
|
申请公布号 |
US6720755(B1) |
申请公布日期 |
2004.04.13 |
申请号 |
US20020146734 |
申请日期 |
2002.05.16 |
申请人 |
LATTICE SEMICONDUCTOR CORPORATION |
发明人 |
SHARPE-GEISLER BRADLEY A. |
分类号 |
G05F3/30;(IPC1-7):G05F3/16 |
主分类号 |
G05F3/30 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|