| 摘要 |
889,576. Semi-conductor devices. COMPAGNIE GENERALE DE TELEGRAPHIE SANS FIL. March 7, 1960 [March 13, 1959], No. 7948/60. Class 37. [Also in Group XL (c)] A negative resistance device comprises a semiconducting body in which the mobility of the majority carriers is much less than that of the minority carriers and which is subjected to an electric field and maintained at a temperature so low that the mobility of the minority carriers is determined by the interaction of the majority and minority carriers. The interaction of the minority carriers with the phonons and the ionized particles or impurities in the body does not contribute to the nobility limitation. A suitable material is P- type indium antimonide and the Figure shows an oscillator circuit using a P-type rod 1 of this material having a length of 1 cm. and a diameter of 2 mm. The rod is enclosed in a housing 9 e.g. in a Dewar flask containing liquid nitrogen (77‹ K.). The housing is positioned so that the rod is in the air gap between magnetic pole pieces 10, 11 which, however, are not essential. The oscillating circuit consists of a pulse generator 2 and series tuned circuit 6, 7, 8. The pulses applied may be of from 1 to 10 seconds duration and the circuit is said to oscillate at frequencies of 10 to 20 mc/s. |
