发明名称 Method for manufacturing a semiconductor film
摘要 A method for manufacturing a semiconductor film includes a step of preparing a first member including a semiconductor substrate, a semiconductor layer, and a separation layer provided between the semiconductor substrate and the semiconductor layer, a step of bonding or attracting a second member which is hardly heated by induction heating, onto the semiconductor layer of the first member, and a step of separating semiconductor layer from the semiconductor substrate at the separation layer by heating the semiconductor substrate by induction heating.
申请公布号 US6720237(B2) 申请公布日期 2004.04.13
申请号 US20020083585 申请日期 2002.02.27
申请人 CANON KABUSHIKI KAISHA 发明人 IWASAKI YUKIKO;SHOJI TATSUMI;NISHIDA SHOJI
分类号 H01L31/04;H01L21/02;H01L21/268;H01L21/30;H01L21/46;H01L21/762;H01L27/12;(IPC1-7):H01L21/30 主分类号 H01L31/04
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