| 摘要 |
An initial estimated value of a process condition is set, and a structure of an element of a semiconductor device is estimated by a process simulator, after which an estimated value of a physical amount measurement value is calculated. Then, an actual measurement value of a physical amount of the element of the semiconductor device, which is obtained by an optical evaluation method, and a theoretical calculated value thereof are compared with each other, so as to obtain a probable structure of the measured semiconductor device element by using, for example, a simulated annealing, or the like. A process condition in a process for other semiconductor device elements can be corrected by using the results. |
