发明名称 |
Vapor controlled czochralski (VCZ) single crystal growth apparatus |
摘要 |
The present invention relates to semiconductor crystal growth equipments. A vapor controlled czochralski (VCZ) single crystal growth apparatus comprises a single crystal furnace, a heating unit, a mechanical transmission unit, and a gaseous adjustment unit. A hot-wall sealed container is mounted in the single crystal furnace, and a crucible is mounted within the hot-wall sealed container. The hot-wall sealed container includes an upper container part and a lower container part. A sealing connection device is provided between the upper and lower container parts. A crucible-transmitting shaft and a seed shaft are inserted into the hot-wall sealed container through respective sealing devices.
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申请公布号 |
US6720509(B2) |
申请公布日期 |
2004.04.13 |
申请号 |
US20010015068 |
申请日期 |
2001.10.26 |
申请人 |
GENERAL RESEARCH INSTITUTE FOR NONFERROUS METALS |
发明人 |
TU HAILING;WANG YONGHONG;QIAN JIAYU;SONG PING;ZHANG FENGYI |
分类号 |
C30B15/00;(IPC1-7):C30B35/00 |
主分类号 |
C30B15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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