| 摘要 |
A dielectric composition is based on a BaO-MgO-Nb2O5 system material (BMN system material) having a dielectric constant, epsilon, of about 30, a large Q-value (no-load quality coefficient) and a comparatively small absolute value of the temperature coefficient (tauf) of its resonance frequency but containing no expensive Ta. The dielectric material has a composite perovskite crystal structure as the main crystal phase, wherein a predetermined amount of KNbO3 is added to a BMN system material. The high frequency characteristics can be further improved by partially replacing Nb with Sb and partially replacing the B site of the perovskite crystal structure with Sn.
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